IRFF312 datasheet
IRFF312 manufactured by:
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Power MOSFET field effect power transistor. Drain-source voltage 400 V. | Download IRFF312 datasheet from General Electric Solid State |
pdf 74 kb |
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MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.15A Others with the same file for datasheet: IRFF310 |
Download IRFF312 datasheet from Siliconix |
pdf 756 kb |
IRFF311 | View IRFF312 to our catalog | IRFF313 |