IRFF311 datasheet
IRFF311 manufactured by:
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Power MOSFET field effect power transistor. Drain-source voltage 350 V. | Download IRFF311 datasheet from General Electric Solid State |
pdf 76 kb |
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MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.35A Others with the same file for datasheet: IRFF313 |
Download IRFF311 datasheet from Siliconix |
pdf 756 kb |
IRFF310 | View IRFF311 to our catalog | IRFF312 |